PART |
Description |
Maker |
Z4GP210-HF |
Lead less chip form, no lead damage, Low power loss, High efficiency Halogen Free Bridge Rectifiers, V<sub>RRM</sub>=1000V, V<sub>DC</sub>=1000V, I<sub>AV</sub>=2A
|
Comchip Technology
|
IRHY7G30CMSE |
1000V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-257AA package RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) 1000V, N-CHANNEL RAD Hard⑩ HEXFET TECHNOLOGY RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) 1000V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY
|
International Rectifier
|
GBU410-G |
Bridge Rectifiers, V-RRM=1000V, V-DC=1000V, I-(AV)=4A
|
Comchip Technology
|
SML100W18 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:1000V,Id(cont):17.3A,Rds(on):0.57Ω)(N沟道增强高电压功率MOS场效应管(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω))
|
SemeLAB SEME-LAB[Seme LAB]
|
APT10086BVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 1000V 13A 0.860 Ohm
|
Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
|
APT10040B2VR APT10040LVR |
POWER MOS V 1000V 25A 0.400 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
|
ADPOW[Advanced Power Technology] Advanced Power Technology Ltd. Advanced Power Technology, Ltd.
|
APT10045JLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWER MOS 7 1000V 21A 0.450 Ohm
|
Advanced Power Technology Ltd.
|
APT1001RSVR APT1001RSVRG |
100% Avalanche Tested Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 1000V 11A 1.000 Ohm
|
Microsemi Corporation ADPOW[Advanced Power Technology]
|
MU210 MU29 MU27 MU28 |
POWER RECTIFIERS(2.0A,500-1000V)
|
MOSPEC[Mospec Semiconductor]
|
SF38 SF39 SF310 SF37 |
POWER RECTIFIERS(3.0A,500-1000V)
|
MOSPEC[Mospec Semiconductor]
|